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Quasi-monolithic integration of high-power GaN-based HEMTs for high-frequency applications

  • Published:2007-10-18 Issue:11 Volume:22 Page:1245-1248
  • ISSN:0268-1242
  • Container-title:Semiconductor Science and Technology
  • language:
  • Short-container-title:Semicond. Sci. Technol.

Author:

Kricke Alexander,Joodaki Mojtaba,Dharmarasu Nethaji,Kompa Guenter,Hillmer Hartmut

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A high‐efficiency 50 W X‐band GaN power amplifier in hybrid MIC technology;International Journal of RF and Microwave Computer-Aided Engineering;2020-11-30

2. Systematic design of hybrid high power microwave amplifiers using large gate periphery GaN HEMTs;AEU - International Journal of Electronics and Communications;2018-02

3. Efficiency enhancement by employing the transistor nonlinear capacitors effects in a 6W hybrid X-band Class-J power amplifier;International Journal of RF and Microwave Computer-Aided Engineering;2017-10-10

4. Coplanar Waveguide (CPW) Loaded With an Electromagnetic Bandgap (EBG) Structure: Modeling and Application to Displacement Sensor;IEEE Sensors Journal;2016-05

5. Radio Frequency Devices;Lecture Notes in Electrical Engineering;2013
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