Publisher
Springer Berlin Heidelberg
Reference21 articles.
1. The International Technology Roadmap for Semiconductors (ITRS) (2009)
2. Joodaki, M., Hillmer, H.: Technological requirements for a self-aligned lateral SiGe HBT with the SiGe layer formed by Ge ion implantation in Si including theoretical performance. In: 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), pp. 231–234 (2006)
3. Joodaki, M., Hillmer, H.: A collector-up SiGe-HBT for high frequency applications. In: German Microwave Conference (GeMiC), Paper 11a-3, Karlsruhe, Germany (2006)
4. Joodaki, M.: Small-signal characterization of SiGe-HBT f T-doubler up to 120 GHz. IEEE Trans. Electron Devices 59(9), 2108–2111 (2005)
5. Joodaki, M., Bertgen, J., Brandl, P., Kraus, B.: Circuit for increasing the unity gain crossover frequency of an amplifier element. US7154340B2