Performance analysis of undoped cylindrical gate all around (GAA) MOSFET at subthreshold regime-Reference-Cited by-同舟云学术

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Performance analysis of undoped cylindrical gate all around (GAA) MOSFET at subthreshold regime

Published:2015-06-19 Issue:3 Volume:6 Page:035010
ISSN:2043-6262
Container-title:Advances in Natural Sciences: Nanoscience and Nanotechnology
language:
Short-container-title:Adv. Nat. Sci: Nanosci. Nanotechnol.

Author:

Jena B,Pradhan K P,Dash S,Mishra G P,Sahu P K,Mohapatra S K

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,General Materials Science

Link

https://iopscience.iop.org/article/10.1088/2043-6262/6/3/035010/pdf

Reference21 articles.

1. Short-channel effect in fully depleted SOI MOSFETs

2. Universality of Short-Channel Effects in Undoped-Body Silicon Nanowire MOSFETs

3. The end of CMOS scaling

4. Multiple-gate SOI MOSFETs

5. Extremely scaled silicon nano-CMOS devices

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1. Thermal influence on performance characteristics of double gate MOSFET biosensors with gate stack configuration;Discover Applied Sciences;2024-08-17

2. Sensitivity enhancement using triple metal gate work function engineering of junctionless cylindrical gate all around SiNW MOSFET based biosensor for neutral biomolecule species detection for upcoming sub 14 nm technology node;Materials Science and Engineering: B;2024-08

3. DC and Analog/RF Performance Evaluation Using Dual Metal Gate Work Function Engineering of Junctionless Cylindrical Gate All Around Si Nanowire MOSFET Using NEGF Approach for Upcoming Sub 5 nm Technology Node;International Journal of Precision Engineering and Manufacturing;2024-05-31

4. An insight into the design of a graded channel gate-all-around (GAA) MOSFET for biosensing applications;Microsystem Technologies;2024-04-17

5. Triple-metal gate work function engineering to improve the performance of junctionless cylindrical gate-all-around Si nanowire MOSFETs for the upcoming sub-3-nm technology node;Journal of Computational Electronics;2024-04

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