Plasma-assisted MBE of GaN pn-junction Grown on Si(111) Substrate
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry
Link
http://cps.scitation.org/doi/pdf/10.1088/1674-0068/23/04/431-436
Reference36 articles.
1. Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors
2. High Al-content AlGaN/GaN MODFETs for ultrahigh performance
3. Microwave electronics device applications of AlGaN/GaN heterostructures
4. The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors
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1. Giant Piezotronic Effect by Photoexcitation–Electronic Coupling in a p-GaN/AlGaN/GaN Heterojunction;ACS Applied Electronic Materials;2022-06-08
2. Impact of varying buffer thickness generated strain and threading dislocations on the formation of plasma assisted MBE grown ultra-thin AlGaN/GaN heterostructure on silicon;AIP Advances;2015-05
3. Plasma assisted molecular beam epitaxy growth and effect of varying buffer thickness on the formation of ultra-thin In0.17Al0.83N/GaN heterostructure on Si(111);Applied Physics Letters;2015-02-23
4. Ni/Ag Schottky contacts on Al0.11Ga0.89N grown on Si (1 1 1) substrate by plasma-assisted MBE;Composite Interfaces;2015-01-02
5. Effect of thermal annealing on GaN pn-junction diode with Pt/Ag as ohmic contact;Composite Interfaces;2013-11-28
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