Impact of varying buffer thickness generated strain and threading dislocations on the formation of plasma assisted MBE grown ultra-thin AlGaN/GaN heterostructure on silicon-Reference-Cited by-同舟云学术

Impact of varying buffer thickness generated strain and threading dislocations on the formation of plasma assisted MBE grown ultra-thin AlGaN/GaN heterostructure on silicon

Published:2015-05 Issue:5 Volume:5 Page:057149
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Chowdhury Subhra¹,Biswas Dhrubes¹²

Affiliation:

1. Advanced Technology Development Centre, Indian Institute of Technology Kharagpur, Kharagpur 721302, India

2. Department of E & E C E, Indian Institute of Technology Kharagpur, Kharagpur 721302, India

Funder

Department of Electronics and Information Technology, Ministry of Communications and Information Technology (DeitY)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/5/1.4921757.pdf?itemId=/content/aip/journal/adva/5/5/10.1063/1.4921757&mimeType=pdf&containerItemId=content/aip/journal/adva

Reference39 articles.

1. Resonant tunneling through quantum wells at frequencies up to 2.5 THz

2. Valence‐band discontinuity between GaN and AlN measured by x‐ray photoemission spectroscopy

3. GaN HEMT and MMIC development at Fraunhofer IAF: performance and reliability

4. Crystal growth and characterization of AlGaN/GaN heterostructures prepared on vicinal-cut sapphire (0001) substrates

5. Repeatable low-temperature negative-differential resistance from Al0.18Ga0.82N/GaN resonant tunneling diodes grown by molecular-beam epitaxy on free-standing GaN substrates

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