A study on secondary defects in self-ion implanted Si-Reference-Cited by-同舟云学术

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A study on secondary defects in self-ion implanted Si

Published:1993-11 Issue:11 Volume:2 Page:833-840
ISSN:1004-423X
Container-title:Acta Physica Sinica (Overseas Edition)
language:
Short-container-title:Acta Phys. Sin. (Overseas Edn)

Author:

Ren-he Tian

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference15 articles.

1. Ion-beam-induced crystallization and amorphization of silicon

2. Ion-beam induced crystallization and amorphization at a crystalline/amorphous interface in <100> silicon

3. Rapid thermal annealing of dopants implanted into preamorphized silicon

4. Near‐surface defects formed during rapid thermal annealing of preamorphized and BF+2‐implanted silicon

5. Reduction of secondary defect formation in MeV B+ion‐implanted Si (100)

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of H + , Ar + , and self-ion-irradiation on secondary defects in MeV P + -implanted Si( 100 );Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-03

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