Free carrier mobility in AlGaN/GaN quantum wells
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/14/i=48/a=384/pdf
Reference23 articles.
1. Spontaneous polarization and piezoelectric constants of III-V nitrides
2. Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
3. Polarization fields determination in AlGaN/GaN heterostructure field-effect transistors from charge control analysis
4. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
5. The polarization-induced electron gas in a heterostructure
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1. 2DEG-based multilayer AlGaN/GaN heterostructures with lowered sheet resistance;ST PETER POLY U J-PH;2023
2. Effect of threading dislocations on carrier mobility in AlGaN/GaN quantum wells;Journal of Physics: Condensed Matter;2008-07-09
3. Assessment of the pendeo-epitaxy effect on 2DEG mobility in III-nitride HEMT heterostructures;physica status solidi (c);2008-05
4. Intrinsic free carrier mobility of quantum wells in polar materials;Physical Review B;2005-09-29
5. AlGaN/GaN HEMTS: material, processing, and characterization;Journal of Materials Science: Materials in Electronics;2003
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