Intrinsic free carrier mobility of quantum wells in polar materials
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.72.125344/fulltext
Reference39 articles.
1. Spontaneous polarization and piezoelectric constants of III-V nitrides
2. Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
3. Polarization fields determination in AlGaN/GaN heterostructure field-effect transistors from charge control analysis
4. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
5. The polarization-induced electron gas in a heterostructure
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