Effect of threading dislocations on carrier mobility in AlGaN/GaN quantum wells
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/20/i=32/a=325210/pdf
Reference43 articles.
1. Free carrier mobility in AlGaN/GaN quantum wells
2. Carrier mobility versus carrier density inAlxGa1−xN/GaNquantum wells
3. Characterisation of dislocations, nanopipes and inversion domains in GaN by transmission electron microscopy
4. The structure and optoelectronic properties of dislocations in GaN
5. High dislocation densities in high efficiency GaN‐based light‐emitting diodes
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