The effect of passivation of boron dopants by hydrogen in nano-crystalline and micro-crystalline silicon films
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/6/i=3/a=011/pdf
Reference9 articles.
1. Study of the atomic models of three donorlike defects in silicon metal‐oxide‐semiconductor structures from their gate material and process dependencies
2. Characterization of plasma-deposited microcrystalline silicon
3. The effect of crystallization on doping efficiency in a-Si:H films
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