Development of optimum p-nc-Si window layers for nc-Si solar cells

Author:

Mondal Praloy12345,Das Debajyoti12345ORCID

Affiliation:

1. Nano-Science Group

2. Energy Research Unit

3. Indian Association for the Cultivation of Science

4. Jadavpur

5. India

Abstract

p-Type nc-Si (p-nc-Si) films have been optimized under low growth temperature (∼180 °C) and low power (∼30 W) parametric conditions in 13.56 MHz RF-PECVD.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Reference46 articles.

1. High efficiency amorphous and nanocrystalline silicon solar cells

2. Material and solar cell research in microcrystalline silicon

3. M. A. Green , E. C.Cho, Y. H.Cho, E.Pink, T.Trupke, K. L.Lin, T.Fangsuwannarak, T.Puzzer, G.Conibee and R.Corkish, All-silicon tandem cells based on ‘artificial’ semiconductor synthesised using silicon quantum dots in a dielectric matrix Proc. 20th European Photovoltaic Solar Energy Conf., Barcelona, Spain, 2005, p. 3

4. Nano-columnar grain growth structure of boron-compensated silicon thin films by transmission electron microscopy

5. Computer analysis of a-Si:H p-i-n solar cells with a hydrogenated microcrystalline silicon p layer

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