Oxide muonics: II. Modelling the electrical activity of hydrogen in wide-gap and high-permittivity dielectrics-Reference-Cited by-同舟云学术

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Oxide muonics: II. Modelling the electrical activity of hydrogen in wide-gap and high-permittivity dielectrics

Published:2006-01-06 Issue:3 Volume:18 Page:1079-1119
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Cox S F J,Gavartin J L,Lord J S,Cottrell S P,Gil J M,Alberto H V,Duarte J Piroto,Vilão R C,Campos N Ayres de,Keeble D J,Davis E A,Charlton M,Werf D P van der

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

http://stacks.iop.org/0953-8984/18/i=3/a=022/pdf

Reference131 articles.

1. Electronic Structure of Amorphous Semiconductors

2. Heavy-fermion systems studied by μSR technique

3. Model for the Electronic Structure of Amorphous Semiconductors

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