Hydrogen impurities in p-type semiconductors, GeS and GeTe-Reference-Cited by-同舟云学术

Hydrogen impurities in p-type semiconductors, GeS and GeTe

Published:2021-11-21 Issue:19 Volume:130 Page:195701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Nakamura Jumpei G.¹²^ORCID,Kawakita Yukinobu³,Shimomura Koichiro²^ORCID,Suemasu Takashi¹^ORCID

Affiliation:

1. Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

2. Muon Science Division, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801, Japan

3. Neutron Science Section, Materials and Life Science Division, J-PARC Center, Japan Atomic Energy Agency (JAEA), Tokai, Ibaraki 319-1195, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0063080

Reference36 articles.

1. Muonium as a model for interstitial hydrogen in the semiconducting and semimetallic elements

2. Oxide muonics: I. Modelling the electrical activity of hydrogen in semiconducting oxides

3. Oxide muonics: II. Modelling the electrical activity of hydrogen in wide-gap and high-permittivity dielectrics

4. The shallow-to-deep instability of hydrogen and muonium in II–VI and III–V semiconductors

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of the solar cell materials Cu(In,Ga)Se2 and Cu2ZnSnS4 with muon spin spectroscopy and density-functional calculations;Journal of Applied Physics;2024-08-01

2. Preparation, structure, and nonlinear optical properties of Al-CdTe films;Journal of the Optical Society of America B;2024-01-04

3. Erratum: “Hydrogen impurities in p-type semiconductors, GeS and GeTe” [J. Appl. Phys. 130, 195701 (2021)];Journal of Applied Physics;2022-05-21