Defect generation in high κ gate dielectric stacks under electrical stress: the impact of hydrogen
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/17/i=21/a=004/pdf
Reference44 articles.
1. Microscopic theory of hydrogen in silicon devices
2. Kinetics ofH2passivation ofPbcenters at the (111) Si-SiO2interface
3. Dissociation kinetics of hydrogen-passivated (111) Si-SiO2interface defects
4. Passivation of Pb0 and Pb1 interface defects in thermal (100) Si/SiO2 with molecular hydrogen
5. Hydrogen Electrochemistry and Stress-Induced Leakage Current in Silica
Cited by 33 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth Elements;Advanced Materials Interfaces;2024-08-23
2. Solubility and diffusivity of hydrogen and its isotopes in the BeO system;Journal of the American Ceramic Society;2023-04-13
3. The higher-k phase formation in amorphous HfO2 films by swift heavy ion irradiation;Journal of Crystal Growth;2022-05
4. Surface Analysis of Dielectric Thin Films by Contact Angle Measurements;Science of Advanced Materials;2018-09-01
5. Defect levels and hyperfine constants of hydrogen in beryllium oxide from hybrid-functional calculations and muonium spectroscopy;Philosophical Magazine;2017-05-15
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3