Electronic structure and band discontinuities in the InAs/GaAs system
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/2/i=23/a=005/pdf
Reference21 articles.
1. InxGa1−xAs−InyGa1−yAsstrained-layer superlattices: A proposal for useful, new electronic materials
2. Rheed and x-ray characterization of InGaAs/GaAs grown by MBE
3. Intermixing at InAs/GaAs and GaAs/InAs interfaces
4. Structural and optical studies on molecular beam epitaxially grown (InAs)m(AlAs)m and (InAs)m(GaAs)m short-period strained layer superlattices
5. Elementary theory of heterojunctions
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