High pressure study of the zinc phosphide semiconductor compound in two different phases
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/21/i=27/a=275802/pdf
Reference30 articles.
1. Evidence of Be3P2 formation during growth of Be-doped phosphorus-based semiconductor compounds
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3. First principles investigation of the electronic and structural properties of Mg3xBe3 3xN2 ternary alloy
4. Density functional study of the group II phosphide semiconductor compounds under hydrostatic pressure
5. Semiempirical tight-binding band structure ofII3V2semiconductors:Cd3P2,Zn3P2,Cd3As2, andZn3As2
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1. Density functional theory (DFT) calculations of structural, elastic, and thermal properties of Zn3P2 compound;International Journal of Modern Physics B;2023-06-17
2. Elucidating the Phase Transformation and Metallization Behavior of Zinc Phosphide under High Pressure;Inorganic Chemistry;2021-06-27
3. Investigation of Structural and Electronic Properties of Zn3P2: Theory and Experiment;Journal of Electronic Materials;2016-03-28
4. Magnetism, electronic structure and half-metallic property of transition metal (V, Cr, Mn, Fe, Co) substituted Zn3P2 dilute magnetic semiconductors: An ab-initio study;Computational Materials Science;2015-05
5. Influence of substrates porosity on the optical behavior of Zn 3 P 2 nanorod thin films;Superlattices and Microstructures;2014-11
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