Evidence of Be3P2 formation during growth of Be-doped phosphorus-based semiconductor compounds
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123216
Reference8 articles.
1. Progress in chemical beam epitaxy
2. Some optical characteristics of beryllium-doped InP grown by chemical beam epitaxy (CBE)
3. Be incorporation and surface morphologies in homoepitaxial InP films
4. Structure cristalline de Be3P2
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