Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/16/i=31/a=006/pdf
Reference70 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. 1.3-μm GaInNAs-AlGaAs distributed feedback lasers
3. Monolithic VCSEL with InGaAsN active region emitting at 1.28 [micro sign]m and CW output power exceeding 500 [micro sign]W at room temperature
4. 1.3 µm GaInAsN Laserdiodes with improved High Temperature Performance
5. Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy
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1. Correlation between the time constant of a photoreflectance signal and the quantum efficiency of a p-n junction;Journal of the Korean Physical Society;2023-03-01
2. Photoreflectance studies of the band gap alignments in boron diluted BGaInAs/GaAs quantum wells;Optical Materials Express;2022-07-20
3. GaAs/InGaAs heterostructure strain effects on self-assembly of InAs quantum dots;Physica E: Low-dimensional Systems and Nanostructures;2020-10
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5. Dynamics of carrier tunneling and recombination in asymmetric coupled InGaN multiple quantum wells;Optics Express;2017-09-28
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