Optoelectronic properties of hydrogenated amorphous germanium deposited by rf-PECVD as a function of applied rf-power
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/17/i=33/a=017/pdf
Reference26 articles.
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3. Substrate Temperature Dependence of the Structural Properties of Glow Discharge Produced a-Ge:H
4. Improvement of plasma-deposited aGe : H thin films by hydrogen dilution of germane
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4. A Novel Poly{(2,5-diyl furan) (benzylidene)}: A New Synthetic Approach and Electronic Properties;ISRN Physical Chemistry;2012-11-20
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