Improvement of plasma-deposited aGe : H thin films by hydrogen dilution of germane
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference22 articles.
1. Electron spin resonance of doped glow-discharge amorphous germanium
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1. Relaxation processes of theGe−Hstretch modes in hydrogenated amorphous germanium;Physical Review B;2006-04-03
2. Optoelectronic properties of hydrogenated amorphous germanium deposited by rf-PECVD as a function of applied rf-power;Journal of Physics: Condensed Matter;2005-08-05
3. Highly sensitive large-area bolometers for scintillation studies below 100 mK;Optical Engineering;2004-07-01
4. Highly sensitive large-area bolometers for scintillation studies below 100 mK (from near IR to soft x rays);Detectors and Associated Signal Processing;2004-02-19
5. Comparative studies of the influence of hydrogen incorporation on the electronic properties of a-Ge:H films prepared by two different techniques;Canadian Journal of Physics;2000-02-01
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