Studies of oxidized hexagonal SiC surfaces and the SiC/SiO2interface using photoemission and synchrotron radiation
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/16/i=17/a=017/pdf
Reference45 articles.
1. Electron spectroscopic analysis of the SiO2/Si system and correlation with metal–oxide–semiconductor device characteristics
2. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
3. Intrinsic SiC/SiO2 Interface States
4. Investigation of nitric oxide and Ar annealed SiO2/SiC interfaces by x-ray photoelectron spectroscopy
5. ARXPS studies of SiO2-SiC interfaces and oxidation of 6H SiC single crystal Si-(001) and C-(001) surfaces
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