Interface gap states and Schottky barrier inhomogeneity at metal/n-type GaN Schottky contacts
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/21/i=33/a=335802/pdf
Reference54 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. III–nitrides: Growth, characterization, and properties
3. Growth and applications of Group III-nitrides
4. Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States
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