Implantation-induced defects in Hg0.78Cd0.22Te studied using slow positrons
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/7/i=45/a=008/pdf
Reference18 articles.
1. Electrical doping of HgCdTe by ion implantation and heat treatment
2. Study of Hg vacancies in (Hg,Cd)Te after THM growth and post-growth annealing by positron annihilation
3. A study of vacancy-type defects by positron-lifetime measurements in a II-VI semiconductor: Cd0.2Hg0.8Te
4. A positron annihilation study of defects in cadmium mercury telluride semiconductor
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1. Defects Characterization of HgCdTe and CdZnTe Compounds by Positron Annihilation Spectroscopy;Journal of Electronic Materials;2022-07-12
2. The nature of the compositional dependence of p–n junction depth in ion-milled p-HgCdTe;Semiconductor Science and Technology;2005-12-16
3. Determination of Hg activity in Hg0.8Cd0.2Te liquid and solid solutions by a quasi-closed-space method;Inorganic Materials;2005-04
4. Mechanism for creation of the mercury diffusion source at type conductivity conversion in p-Hg<formula><inf><roman>1-x</roman></inf></formula>Cd<formula><inf><roman>x</roman></inf></formula>Te under ion-beam milling;SPIE Proceedings;2003-09-30
5. Slow and fast positron studies of defects created in silicon by swift Kr ions;Applied Surface Science;1999-08
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