Study of Hg vacancies in (Hg,Cd)Te after THM growth and post-growth annealing by positron annihilation-Reference-Cited by-同舟云学术

Study of Hg vacancies in (Hg,Cd)Te after THM growth and post-growth annealing by positron annihilation

Published:1990-04 Issue:1-4 Volume:101 Page:512-516
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Krause R.,Klimakow A.,Kiessling F.M.,Polity A.,Gille P.,Schenk M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference8 articles.

1. Positrons in Solids,1979

2. Positron Studies of Defects in III–V Semiconductor Compounds

3. THM, a breakthrough in Hg1−xCdxTe bulk metallurgy

4. Lattice Defects in Semiconducting Hg1 − x Cd x Te Alloys: I . Defect Structure of Undoped and Copper Doped

5. R. Krause, A. Polity, A. Klimakow and W. Hörstel, A. positron study of Hg vacancies in Hg1-xCdxTe, Part 1: Hg vacancies after post-growth annealing, to be published.

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