A positron annihilation study of defects in cadmium mercury telluride semiconductor-Reference-Cited by-同舟云学术

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A positron annihilation study of defects in cadmium mercury telluride semiconductor

Published:1992-06-29 Issue:26 Volume:4 Page:5825-5834
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Smith C,Rice-Evans P C,Shaw N,Smith D L

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

http://stacks.iop.org/0953-8984/4/i=26/a=016/pdf

Reference36 articles.

1. The sources and behaviour of impurities in LPE-grown (Cd,Hg)Te layers on CdTe(111) substrates

2. The ageing of Li implants in cadmium mercury telluride

3. An accurate calculations of the 511 keV line background in positron annihilation doppler broadening studies

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron-positron annihilation in the narrow-gap semiconductor Hg 1-x Cd x Te;SPIE Proceedings;2001-02-22

2. A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation;Japanese Journal of Applied Physics;1997-11-15

3. Rapid thermal annealing of n-(Cd, Hg)Te crystals;Materials Science and Engineering: B;1997-02

4. Implantation-induced defects in Hg0.78Cd0.22Te studied using slow positrons;Journal of Physics: Condensed Matter;1995-11-06

5. Characterization of diamond films by slow positrons;Diamond and Related Materials;1994-11

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