Numerical analysis of the effective masses in InGaAsN quantum-well structures with self-consistent effects
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/17/i=41/a=023/pdf
Reference7 articles.
1. Characterization of effective masses in strained quantum-well laser structures
2. Nitride Semiconductors and Devices
3. Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers
4. Electronic structure ofInyGa1−yAs1−xNx/GaAsmultiple quantum wells in the dilute-Nregime from pressure andk⋅pstudies
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1. Evaluation of Effective Mass in InGaAsN/GaAs Quantum Wells Using Transient Spectroscopy;Materials;2022-10-30
2. Quantum lifetimes and momentum relaxation of electrons and holes in Ga0.7In0.3N0.015As0.985/GaAs quantum wells;Philosophical Magazine;2011-02
3. Analysis of linewidth enhancement factor for quantum well structures based on InGaAsN/GaAs material system;Journal of Applied Physics;2009-09-15
4. Broad gain spectra of single and multiple InGaAsN quantum well systems;physica status solidi (b);2009-06-12
5. Weak-field nonlinear dynamic conductivity in a quantum well with a transverse magnetic field;JETP Letters;2008-09
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