Abstract
Abstract
Molecular beam epitaxy of K-doped Ba122 (Ba1−x
K
x
Fe2As2) superconductor was realized on an MgO substrate. Microstructural observation revealed that the undoped Ba122 served as a perfect buffer layer for epitaxial growth of the K-doped Ba122. The film exhibited a high critical temperature of 39.8 K and a high critical current density of 3.9 MA cm−2 at 4 K. The successful growth of epitaxial thin film will enable artificial single grain boundary on oxide bicrystal substrates and reveal the grain boundary transport nature of K-doped Ba122.
Funder
Advanced Characterization Platform of the Nanotechnology Platform Japan
JST CREST
Subject
Materials Chemistry,Electrical and Electronic Engineering,Metals and Alloys,Condensed Matter Physics,Ceramics and Composites
Cited by
8 articles.
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