Energy-loss mechanism of single-crystal silicon microcantilever due to surface defects generated during plasma processing-Reference-Cited by-同舟云学术

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Energy-loss mechanism of single-crystal silicon microcantilever due to surface defects generated during plasma processing

Published:2013-05-07 Issue:6 Volume:23 Page:065020
ISSN:0960-1317
Container-title:Journal of Micromechanics and Microengineering
language:
Short-container-title:J. Micromech. Microeng.

Author:

Wada Akira,Yanagisawa Yuuki,Altansukh Batnasan,Kubota Tomohiro,Ono Takahito,Yamasaki Satoshi,Samukawa Seiji

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0960-1317/23/i=6/a=065020/pdf

Reference28 articles.

1. Smooth and Vertical Profile Dry Etching of Si Using XeF2Plasma

2. Charge build‐up in Si‐processing plasma caused by electron shading effect

3. On-Wafer Monitoring of Vacuum-Ultraviolet Radiation Damage in High-Density Plasma Processes

4. Surface Reaction Enhancement by UV irradiation during Si Etching Process with Chlorine Atom Beam

5. Defect generation during plasma treatment of semiconductors

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1. Surface evolution of fused silica hemispherical resonators and its influence on the quality factor;Sensors and Actuators A: Physical;2023-09

2. Low Cost and High‐Aspect Ratio Micro/Nano Device Fabrication by Using Innovative Metal‐Assisted Chemical Etching Method;Advanced Engineering Materials;2019-07-03

3. Thermoelastic damping in trilayered microplate resonators;International Journal of Mechanical Sciences;2019-02

4. Progress in performance enhancement methods for capacitive silicon resonators;Japanese Journal of Applied Physics;2017-09-29

5. High Aspect Ratio Silicon Structures Produced via Metal-Assisted Chemical Etching and Assembly Technology for Cantilever Fabrication;IEEE Transactions on Nanotechnology;2017-07

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