Fabrication and characterization of amorphous Si films by PECVD for MEMS-Reference-Cited by-同舟云学术

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Fabrication and characterization of amorphous Si films by PECVD for MEMS

Published:2004-10-26 Issue:1 Volume:15 Page:136-142
ISSN:0960-1317
Container-title:Journal of Micromechanics and Microengineering
language:
Short-container-title:J. Micromech. Microeng.

Author:

Chung Chen-Kuei,Tsai Ming-Qun,Tsai Po-Hao,Lee Chiapyng

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Substrate dependence of initial growth of microcrystalline silicon in plasma‐enhanced chemical vapor deposition

2. Hydrogenated amorphous silicon with substrate-dependent structure

3. Properties of hydrogenated amorphous silicon films prepared by low‐frequency (50 Hz) plasma‐enhanced chemical‐vapor deposition

4. High rate deposition of a-Si:H and a-SiNx:H by VHF PECVD

5. Particle formation and a-Si:H film deposition in narrow-gap RF plasma CVD

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