Investigation of Si(h k l) surfaces etched in KOH solutions saturated withtertiary-butyl alcohol
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,Electronic, Optical and Magnetic Materials
Reference30 articles.
1. Silicon anisotropic etching in alkaline solutions III: On the possibility of spatial structures forming in the course of Si(100) anisotropic etching in KOH and KOH+IPA solutions
2. The effect of isopropyl alcohol on etching rate and roughness of (1 0 0) Si surface etched in KOH and TMAH solutions
3. Effects of alcoholic moderators on anisotropic etching of silicon in aqueous potassium hydroxide solutions
4. Improvement in smoothness of anisotropically etched silicon surfaces: Effects of surfactant and TMAH concentrations
5. Surfactant Adsorption on Single-Crystal Silicon Surfaces in TMAH Solution: Orientation-Dependent Adsorption Detected by In Situ Infrared Spectroscopy
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