Wire-bonded through-silicon vias with low capacitive substrate coupling-Reference-Cited by-同舟云学术

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Wire-bonded through-silicon vias with low capacitive substrate coupling

Published:2011-07-26 Issue:8 Volume:21 Page:085035
ISSN:0960-1317
Container-title:Journal of Micromechanics and Microengineering
language:
Short-container-title:J. Micromech. Microeng.

Author:

Fischer A C,Grange M,Roxhed N,Weerasekera R,Pamunuwa D,Stemme G,Niklaus F

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Through-Silicon Via (TSV)

2. High-Density Through Silicon Vias for 3-D LSIs

3. Two-Dimensional and Three-Dimensional Integration of Heterogeneous Electronic Systems Under Cost, Performance, and Technological Constraints

4. Handbook of 3D Integration

5. 3D LED and IC wafer level packaging

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1. Single‐Contact, Four‐Terminal Microelectromechanical Relay for Efficient Digital Logic;Advanced Electronic Materials;2022-09-06

2. Overview;3D and Circuit Integration of MEMS;2021-04-23

3. Through-substrate vias based three-dimensional interconnection technology;Handbook of Silicon Based MEMS Materials and Technologies;2020

4. Two-step Poly-Si Through-silicon via for High-temperature Process of Bioprobe;IEEJ Transactions on Sensors and Micromachines;2018-12-01

5. Evaluation of substrate noise suppression method to mitigate crosstalk among trough-silicon vias;Japanese Journal of Applied Physics;2018-03-16

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