Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6463/aaa1b9/pdf
Reference38 articles.
1. Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture
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5. Filament scaling forming technique and level-verify-write scheme with endurance over 107 cycles in ReRAM
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