Filament scaling forming technique and level-verify-write scheme with endurance over 107 cycles in ReRAM-Reference-Cited by-同舟云学术

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Filament scaling forming technique and level-verify-write scheme with endurance over 107 cycles in ReRAM

Published:2013-02 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers
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Author:

Kawahara A.,Kawai K.,Ikeda Y.,Katoh Y.,Azuma R.,Yoshimoto Y.,Tanabe K.,Zhiqiang Wei ,Ninomiya T.,Katayama K.,Yasuhara R.,Muraoka S.,Himeno A.,Yoshikawa N.,Murase H.,Shimakawa K.,Takagi T.,Mikawa T.,Aono K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6480926/6487590/06487708.pdf?arnumber=6487708

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Write–Verify-Free MLC RRAM Using Nonbinary Encoding for AI Weight Storage at the Edge;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2024-02

2. A 28-nm RRAM Computing-in-Memory Macro Using Weighted Hybrid 2T1R Cell Array and Reference Subtracting Sense Amplifier for AI Edge Inference;IEEE Journal of Solid-State Circuits;2023-10

3. Low-Rank Gradient Descent for Memory-Efficient Training of Deep In-Memory Arrays;ACM Journal on Emerging Technologies in Computing Systems;2023-04-30

4. TaOx ReRAM Cell-level Unidirectional Neural Network Weight Control for Non-linearity & Variation Robust Transfer Learning of Low Cost Digital eCiM;2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2023-03-07

5. In-Memory Computing for Machine Learning and Deep Learning;IEEE Journal of the Electron Devices Society;2023

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