Abstract
Abstract
Lateral epitaxial growth in vertical β-Ga2O3 nanowires was studied on sapphire substrates via metal organic chemical vapor deposition by controlling growth temperature and O2 flow rate. The lateral epitaxial growth rate of β-Ga2O3 rise up with increasing growth temperature and decreasing O2 flow rate, which are related to reaction kinetics and parasitic reaction, respectively. In addition, a growth model is proposed to explain the morphology of nanowires when growth condition changes. These results can provide important guidance on addressing slow coalescence rate of β-Ga2O3 nuclear islands on heterogeneous substrates and open new doors to β-Ga2O3 optoelectronic and electronic devices on cost-effective foreign substrates.
Funder
Natural Science Foundation Key Project of Jiangxi Province, China
National Natural Science Foundation of China
Natural Science Foundation of Jiangsu Province, China
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
5 articles.
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