Effects of sapphire substrate orientation on Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy using α-Cr2O3 buffers

Abstract

Abstract Heavily Sn-doped films of α-Ga2O3 were grown by halide vapor phase epitaxy (HVPE) on basal plane c-sapphire and on (10-12) r-sapphire substrates with and without α-Cr2O3 thin buffers prepared by magnetron sputtering and annealing in air at 500 °C for 3 h. For both substrate orientations, the use of α-Cr2O3 buffers led to three major effects. The first was a substantial decrease of the half-width of the symmetric and asymmetric x-ray reflections. The second was an order of magnitude decrease of the net donor concentration produced by flowing the same amounts of Sn into the reactor. Third, there was a reduction in the concentration of the major electron trap in the films near E c − 1 eV by more than a factor of two. These results show the major influence of sapphire substrate orientation on the electrical and structural properties of α-Ga2O3 grown by HVPE.