Abstract
Abstract
Memristive devices have shown a great potential for non-volatile memory circuits and neuromorphic computing. For both applications it is essential to know the physical mechanisms behind resistive switching; in particular, the time response to external voltage signals. To shed light in these issues we have studied the role played by the applied voltage ramp rate in the electrical properties of TiN/Ti/HfO2/W metal–insulator–metal resistive switching devices. Using an ad hoc experimental set-up, the current–voltage characteristics were measured for ramp rates ranging from 100 mV s−1–1 MV s−1. These measurements were used to investigate in detail the set and reset transitions. It is shown that the highest ramp rates allow controlling the resistance values corresponding to the intermediate states at the very beginning of the reset process, which is not possible by means of standard quasistatic techniques. Both the set and reset voltages increase with the ramp rate because the oxygen vacancies movement is frequency dependent so that, when the ramp rate is high enough, the conductive filaments neither fully form nor dissolve. In agreement with Chua’s theory of memristive devices, this effect causes the device resistance window to decrease as the ramp rate increases, and even to vanish for very high ramp rates. Remarkably, we demonstrate that the voltage ramp rate can be straightforwardly used to control the conductance change of the switching devices, which opens up a new way to program the synaptic weights when using these devices to mimic synapses for neuromorphic engineering applications. Moreover, the data obtained have been compared with the predictions of the dynamic memdiode model.
Funder
Consejería de Conocimiento, Investigación y Universidad, Junta de Andalucía
CSIC Intramural project
Ramon y Cajal
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference47 articles.
1. Memrisitive technologies for data storage, computation, encryption, and radio-frequency communication;Lanza;Science,2022
2. Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (MLC) storage, modeling, and applications;Zahoor;Nanoscale Res. Lett.,2020
3. Impact of oxygen exchange reaction at the ohmic interface in Ta2O5-based ReRAM devices;Kim;Nanoscale,2016
4. Real-time in situ optical tracking of oxygen vacancy migration in memristors;Di Martino;Nat. Electron.,2020
5. Effect of electrode and oxide properties on the filament kinetics during electroforming in metal-oxide-based memories;Zhang;npj Comput. Mater.,2022
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献