Raman and IR-ATR spectroscopy studies of heteroepitaxial structures with a GaN:C top layer-Reference-Cited by-同舟云学术

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Raman and IR-ATR spectroscopy studies of heteroepitaxial structures with a GaN:C top layer

Published:2017-08-16 Issue:36 Volume:50 Page:365103
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Cerqueira M F,Vieira L G,Alves A,Correia R,Huber M,Andreev A,Bonanni A,Vasilevskiy M I

Funder

Fundaçao para a Ciencia e a Tecnologia (FCT), Portugal

Infineon Technologies Austria AG

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6463/aa7c4b/pdf

Reference45 articles.

1. The life and times of the LED — a 100-year history

2. Characterization of AlN/AlGaN/GaN:C heterostructures grown on Si(111) using atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements

3. Optical and electrical properties of (1-101)GaN grown on a 7° off-axis (001)Si substrate

4. Resonant Raman and FTIR spectra of carbon doped GaN

5. Carbon impurities and the yellow luminescence in GaN

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Identification of carbon location in p-type GaN: Synchrotron x-ray absorption spectroscopy and theory;Applied Physics Letters;2022-12-19

2. Fingerprints of carbon defects in vibrational spectra of GaN considering the isotope effect;Physical Review B;2022-11-29

3. Polarization-sensitive optical Tamm state and its application in polarization-sensitive absorption;Results in Physics;2022-09

4. An Experimental Study of Carbon-Doped GaN via Solid–Gas Reaction Route and Investigation of Its Defect-Related Luminescence;ACS Applied Electronic Materials;2022-06-16

5. Carbon complexes in highly C-doped GaN;Physical Review B;2021-08-05

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