Abstract
Abstract
An electron donor–acceptor system composed of a C60 fullerene acceptor and poly(9-vinylcarbazole) (PVK) as the donor has been constructed. This material can respond to both electrical and optical stimuli. Using the C60:PVK blends as the active layer, a solution-processed active layer with a configuration of indium tin oxid (ITO)/C60:PVK/Al is fabricated. Interestingly, when the applied voltages varied from 0 to −0.8 V, the as-fabricated device exhibits both photo-induced resistive state changes and volatile photo-response characteristics in the broadband visible region. The light illumination gives rise to a significant decrease in the device resistance. Furthermore, it is also found that, when the sweep-voltage applied to the device is changed from 0 to ±4 V, this device shows a typical nonvolatile rewritable memory performance in the dark. Upon illumination with different wavelengths of light, both the switching-on voltage and the ON/OFF ratio of the ITO/C60:PVK/Al device are found to be greatly decreased. This work opens up a pathway to the integration of information storage and modulating and demodulating functions in an optoelectronic device.
Funder
National Natural Science Foundation of China
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials