The effects of two-stage HT-GaN growth with different V/III ratios during 3D–2D transition
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6463/aa9bd6/pdf
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1. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes
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