Abstract
Abstract
The formation of high-photoresponsivity semiconducting films composed of earth-abundant elements on a SiO2 substrate is of particular importance for large-scale deployment of solar cells. We investigated the deposition of high-photoresponsivity BaSi2 films by radio-frequency sputtering on indium-tin-oxide (ITO), Ti, or TiN electrodes formed on a SiO2 substrate. Raman spectroscopy and x-ray diffraction measurements revealed the formation of randomly oriented polycrystalline BaSi2 films only on TiN/SiO2 substrates at 570 °C–650 °C. In contrast, impurity phases such as Ba oxides and TiSi2 were included when ITO and Ti layers were used, respectively. The photoresponsivity of the BaSi2 films on TiN electrodes reached 1.1 A W−1 at a wavelength of 790 nm under a bias voltage of 0.5 V applied between the front ITO and bottom TiN electrodes. This value is equivalent to the highest photoresponsivity ever achieved for BaSi2 epitaxial films on Si(111) substrates by molecular beam epitaxy.
Funder
Japan Society for the Promotion of Science
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
17 articles.
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