Control of hole concentration in sputter-deposited BaSi2 films by B implantation and its application to p-BaSi2/n-Si solar cells-Reference-Cited by-同舟云学术

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Control of hole concentration in sputter-deposited BaSi2 films by B implantation and its application to p-BaSi2/n-Si solar cells

Published:2024-06 Issue: Volume:175 Page:108296
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Sato Takumi,Aonuki Sho,Takenaka Haruki,Du Rui,Kido Kazuki,Hasebe Hayato,Narita Shunsuke,Koda Yoichiro,Mesuda Masami,Toko Kaoru,Suemasu Takashi

Funder

Japan Society for the Promotion of Science

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Elsevier BV

Reference42 articles.

1. Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%

2. Design rules for high-efficiency both-sides-contacted silicon solar cells with balanced charge carrier transport and recombination losses

3. Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells

4. Solar cell efficiency tables (version 62)

5. The roles of carrier concentration and interface, bulk, and grain-boundary recombination for 25% efficient CdTe solar cells

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