Abstract
Abstract
In order to investigate the photoelectric characteristics of 80 × 120 µm2 mini-light-emitting-diodes (mini-LEDs) with sidewall passivation by atomic layer deposition (ALD), this paper uses the techniques of spectrometer-based spectroradiometer and microscopic hyperspectral imaging (µ-HSI). The temperature-dependent electroluminescence is measured using a spectrometer-based spectroradiometer. By analyzing the rising parts of external quantum efficiency at room temperature with a two-level model, the difference of physical mechanisms between mini-LEDs with ALD and without ALD are determined. In addition, the thermal quenching indicates that the ALD sidewall passivation can enhance the temperature stability of the mini-LEDs. The ALD sidewall passivation also enhances the light extraction efficiency according to the theoretical calculation of transmittance. Moreover, the µ-HSI technique is used to evaluate different local areas of mini-LEDs. The obtained results reveal the optimization on lateral distribution of current density within the chip after sidewall passivation.
Funder
Major Science and Technology Project of Xiamen, China
Science and Technology Plan Project
Research Funds for the Central Universities
National Natural Science Foundation of China
Hong Kong University of Science and Technology - Foshan joint research program
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
7 articles.
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