Theαandγplasma modes in plasma-enhanced atomic layer deposition with O2–N2capacitive discharges-Reference-Cited by-同舟云学术

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Theαandγplasma modes in plasma-enhanced atomic layer deposition with O2–N2capacitive discharges

Published:2017-02-03 Issue:9 Volume:50 Page:095201
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Napari M,Tarvainen O,Kinnunen S,Arstila K,Julin J,Fjellvåg Ø S,Weibye K,Nilsen O,Sajavaara T

Funder

Suomen Akatemia

European Cooperation in Science and Technology

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/50/i=9/a=095201/pdf

Reference71 articles.

1. Atomic layer deposition (ALD): from precursors to thin film structures

2. Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

3. Principles of Plasma Discharges and Materials Processing

4. Investigation of the growth kinetics of glow‐discharge hydrogenated amorphous silicon using a radical separation technique

5. Development of triode type RF plasma enhanced CVD equipment for low temperature growth of carbon nanotube

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