Impact of active layer thickness of nitrogen-doped In–Sn–Zn–O films on materials and thin film transistor performances-Reference-Cited by-同舟云学术

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Impact of active layer thickness of nitrogen-doped In–Sn–Zn–O films on materials and thin film transistor performances

Published:2018-04-04 Issue:17 Volume:51 Page:175101
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Li Zhi-Yue^ORCID,Yang Hao-Zhi,Chen Sheng-Chi^ORCID,Lu Ying-Bo^ORCID,Xin Yan-Qing,Yang Tian-Lin,Sun Hui

Funder

Natural Science Foundation of Shandong Province

Province Science and Technology Project of Shandong

Ministry of Science and Technology, Taiwan

National Natural Science Foundation of China

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6463/aab7db/pdf

Reference35 articles.

1. Study of current-mode active pixel sensor circuits using amorphous InSnZnO thin-film transistor for 50-μm pixel-pitch indirect X-ray imagers

2. Bias stress instability of double-gate a-IGZO TFTs on polyimide substrate

3. Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics

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1. Advances in mobility enhancement of ITZO thin-film transistors: a review;Journal of Semiconductors;2023-09-01

2. Amorphous N-doped InSnZnO thin films deposited by RF sputtering for thin-film transistor application;Materials Advances;2023

3. Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors;Nanotechnology;2022-10-28

4. Research Progress of p-Type Oxide Thin-Film Transistors;Materials;2022-07-08

5. Sol-gel indium-zinc-tin-oxide thin film transistor pixel array with superior stabilityunder negative bias illumination stress;Acta Physica Sinica;2022

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