Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics
Author:
Affiliation:
1. Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
Funder
King Abdullah University of Science and Technology
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.6b06498
Reference30 articles.
1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
2. High-performance flexible zinc tin oxide field-effect transistors
3. Indium-Free Fully Transparent Electronics Deposited Entirely by Atomic Layer Deposition
4. Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature
5. Effects of native defects on optical and electrical properties of ZnO prepared by pulsed laser deposition
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