Author:
Jing Bin,Xu Meng,Peng Cong,Chen Long-Long,Zhang Jian-Hua,Li Xi-Feng, ,
Abstract
In this paper, we fabricate a back channel etched structure thin film transistor (TFT) pixel array with hafnium-aluminum oxide dielectric and indium-zinc-tin-oxide (IZTO) semiconductor using a solution process. The electrical characteristics of IZTO TFT are modified by N<sub>2</sub>O plasma treatment. In comparison with the subthreshold swing and saturation mobility of the device untreated by plasma , the subthreshold swing decreases from 204 to 137 mV·dec<sup>–1</sup>, and the saturation mobility increases from 29.12 to 51.52 cm<sup>2</sup>·V<sup>–1</sup>·s<sup>–1</sup>. Improvement in the mobility and the subthreshold swing (SS) demonstrate that interface states may be passivated by reactive O radicals that are generated by N<sub>2</sub>O plasma, which is confirmed by the result of X-ray photoelectron spectrum analysis. In addition, the stability of negative bias illumination stress (NBIS) shift is only 0.1V for 3600 s with an illumination intensity of 10000 lux. This result indicates that its superior stability meets the requirements for the display driver. Therefore, N<sub>2</sub>O plasma treatment is verified to be an effective method to improve device performance and light stability for IZTO TFT pixel array.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
3 articles.
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