Indium-incorporation enhancement of photoluminescence properties of Ga(In)SbBi alloys-Reference-Cited by-同舟云学术

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Indium-incorporation enhancement of photoluminescence properties of Ga(In)SbBi alloys

Published:2017-08-22 Issue:37 Volume:50 Page:375102
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Linhart W M,Gladysiewicz M,Kopaczek J,Rajpalke M K,Ashwin M J,Veal T D,Kudrawiec R

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6463/aa7e64/pdf

Reference31 articles.

1. Molecular beam epitaxy growth of GaAs1−xBix

2. Growth and properties of the dilute bismide semiconductor GaAs_{1−xBi_{x a complementary alloy to the dilute nitrides}}

3. Composition dependence of photoluminescence of GaAs1−xBix alloys

4. Spin lifetime measurements in GaAsBi thin films

5. Growth and properties of GaSbBi alloys

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1. Carrier dynamics in (Ga,In)(Sb,Bi)/GaSb quantum wells for laser applications in the mid-infrared spectral range;Scientific Reports;2022-07-28

2. Radiative and nonradiative recombination processes in GaNP(As) alloys;Materials Science and Engineering: B;2022-02

3. Arsenic‐Induced Growth of Dodecagonal GaN Microrods with Stable a ‐Plane Walls;Advanced Optical Materials;2020-12-23

4. Molecular-beam epitaxy of GaInSbBi alloys;Journal of Applied Physics;2019-10-21

5. Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment;Journal of Applied Physics;2019-05-28

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