Molecular-beam epitaxy of GaInSbBi alloys
Author:
Affiliation:
1. IES, University of Montpellier, CNRS, F-34000 Montpellier, France
2. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D-10117 Berlin, Germany
Funder
Hubert Curien Program - PROCOPE
Agence Nationale de la Recherche
Deutscher Akademischer Austausch Dienst Kairo
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5096226
Reference42 articles.
1. New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy
2. Molecular beam epitaxy growth of GaAs1−xBix
3. Band gap of GaAs1−xBix, 0
4. Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix
5. Calculated spin-orbit splitting of all diamondlike and zinc-blende semiconductors: Effects ofp1∕2local orbitals and chemical trends
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