Etching of smoothing/without undercutting deep trench in silicon with SF6/O2 containing plasmas
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Published:2021-09-01
Issue:3
Volume:3
Page:035048
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ISSN:2631-8695
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Container-title:Engineering Research Express
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language:
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Short-container-title:Eng. Res. Express
Author:
Zhang WenwenORCID,
Huang Renrui,
Gao QingyaoORCID
Subject
General Engineering
Cited by
5 articles.
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