Etching of smoothing/without undercutting deep trench in silicon with SF6/O2 containing plasmas
Author:
Publisher
IOP Publishing
Subject
General Engineering
Link
https://iopscience.iop.org/article/10.1088/2631-8695/ac2720/pdf
Reference20 articles.
1. Characterization of a time multiplexed inductively coupled plasma etcher;Ayon;J. Electrochem. Soc.,1999
2. Balancing the etching and passivation in time-multiplexed deep dry etching of silicon;Blauw;J. Vac. Sci. Technol. B,2001
3. Comparison of Cl2 and F-based dry etching for high aspect ratio Si microstructures etched with an inductively coupled plasma source;Tian;J. Vac. Sci. Technol. B,2000
4. Temperature influence on etching deep holes with SF6/O2 cryogenic plasma;Craciun;J. Micromech. Microeng.,2002
5. Effect of process parameters on the surface morphology and mechanical performance of silicon structures after deep reactive ion etching (DRIE);Chen;J. Microelectromech. Syst.,2002
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1. Etching scallop-less nano-TSV with F/O coupling plasma;2023 24th International Conference on Electronic Packaging Technology (ICEPT);2023-08-08
2. In situ diagnostics of the Si etching structures profile in ICP SF6/C4F8 plasma: Macrostructures;Journal of Vacuum Science & Technology A;2023-04-20
3. Inductively Coupled Plasma Dry Etching of Silicon Deep Trenches with Extremely Vertical Smooth Sidewalls Used in Micro-Optical Gyroscopes;Micromachines;2023-04-14
4. In situ diagnostics of the Si etching structures profile in ICP SF6/C4F8 plasma: Macrostructures;2022-11-21
5. Study on the Transformation of Si Trench Profile With Low Pressure of SF₆/O₂ Containing Plasmas;IEEE Transactions on Semiconductor Manufacturing;2022-11
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