Chemical and structural arrangement of the trigonal phase in GeSbTe thin films-Reference-Cited by-同舟云学术

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Chemical and structural arrangement of the trigonal phase in GeSbTe thin films

Published:2017-01-04 Issue:6 Volume:28 Page:065706
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Mio Antonio M,Privitera Stefania M S,Bragaglia Valeria,Arciprete Fabrizio,Bongiorno Corrado,Calarco Raffaella,Rimini Emanuele

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/28/i=6/a=065706/pdf

Reference22 articles.

1. Phase-change materials for rewriteable data storage

2. Electrical-field induced giant magnetoresistivity in (non-magnetic) phase change films

3. Giant multiferroic effects in topological GeTe-Sb2Te3superlattices

4. Epitaxial phase-change materials

5. Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy

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1. Study of SiGeAsTe and SiGeAsSe chalcogenide thin films by Raman spectroscopy and understanding of their OTS properties;Journal of Non-Crystalline Solids;2024-11

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3. Reversible Crystalline‐Crystalline Transitions in Chalcogenide Phase‐Change Materials;Advanced Functional Materials;2024-07-16

4. Tunable metasurfaces enabled by phase-change materials;Semiconductors and Semimetals;2024

5. Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe‐Rich (GeTe)_m(Sb₂Te₃)_n Lamellae;Advanced Science;2023-11-21

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